Process for forming thin dielectric layers in semiconductor devices
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United States of America Patent
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Aug 28, 2001
Grant Date -
N/A
app pub date -
Feb 8, 1999
filing date -
Feb 8, 1999
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Abstract
A process for producing thin dielectric films is disclosed. In particular, the process is directed to forming oxide films having a thickness of less than about 60 angstroms. The oxide films can be doped with an element, such as nitrogen or boron. For example, in one embodiment, an oxynitride coating can be formed on a semiconductor wafer. According to the present invention, the very thin coatings are formed by reacting a gas with a semiconductor wafer while the temperature of the wafer is being increased in a rapid thermal processing chamber to a maximum temperature. According to the process, primarily all of the coating is formed during the 'ramp up' portion of the heating cycle. Consequently, the wafer is maintained at the maximum target temperature for a very short period of time.
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