Method for depositing layers of high quality semiconductor material
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United States of America Patent
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Aug 14, 2001
Grant Date -
N/A
app pub date -
Aug 19, 1999
filing date -
Aug 20, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.
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