Process for producing heteropitaxial diamond layers on Si-substrates
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United States of America Patent
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Aug 14, 2001
Grant Date -
N/A
app pub date -
Jul 17, 1995
filing date -
Oct 1, 1992
priority date (Note) -
Expired
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Abstract
The invention relates to a method for producing heteroepitaxial diamond layers on Si-substrates by means of CVD and standard process gases, in which (a) during the nucleation phase a negative bias voltage is applied to the Si-substrate and (b) following the nucleation phase diamond deposition takes place.
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