Electron beam treatment of fluorinated silicate glass
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United States of America Patent
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Aug 7, 2001
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N/A
app pub date -
Sep 30, 1999
filing date -
Sep 30, 1999
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Abstract
The invention pertains to dielectric films for the production of microelectronic devices. A relatively stabile fluorinated silicate glass film is produced by depositing a fluorinated silicate glass film onto a substrate and then exposing the fluorinated silicate glass film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
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