Method for manufacturing thin film using atomic layer deposition
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United States of America Patent
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Aug 7, 2001
Grant Date -
N/A
app pub date -
Aug 9, 1999
filing date -
Aug 7, 1998
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Abstract
A thin film manufacturing method is provided. The method includes the step of chemically adsorbing a first reactant on a substrate by injecting the first reactant into a chamber in which the substrate is loaded. Physisorbed first reactant on the chemically adsorbed first reactant is removed by purging or pumping the chamber. After the first reactant is densely chemically adsorbed on the substrate by re-injecting the first reactant into the chamber, the physisorbed first reactant on the dense chemisorbed first reactant is removed by purging or pumping the chamber. A second reactant is chemically adsorbed onto the surface of the substrate by injecting the second reactant into the chamber. Physisorbed second reactant on the chemisorbed first reactant and the second reactant is removed by purging or pumping the chamber. A solid thin film is formed by chemical exchange through densely adsorbing the second reactant onto the substrate by re-injecting the second reactant into the chamber. According to the present invention, it is possible to obtain a precise stoichiometric thin film having a high film density, since the first reactant and the second reactant are densely adsorbed and the impurities are substantially removed by pumping or purging
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