Method of forming capacitors on integrated circuit
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United States of America Patent
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Jul 31, 2001
Grant Date -
N/A
app pub date -
Jan 25, 1999
filing date -
Jan 23, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of making a semiconductor device, comprises the steps of providing an insulating layer, forming a series of holes in the insulating layer, depositing a first layer of a metal, or a compound thereof, on the insulating layer such and in the holes, forming a dielectric layer on the first layer, the dielectric consisting of a compound of the metal, and forming a second layer of the metal, or a compound thereof, on the dielectric layer. The first, second and dielectric layers form a conformal capacitive sandwich structure extending into the holes.
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