Method of forming self-aligned contact pads on electrically conductive lines
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United States of America Patent
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Jul 31, 2001
Grant Date -
N/A
app pub date -
Nov 18, 1999
filing date -
Nov 20, 1998
priority date (Note) -
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Abstract
Self aligned contact pads in a semiconductor device and a method for forming thereof wherein etching back process is carried out on the contact pad comprising material and insulating layer down to the top surface of a capping layer of a gate electrode, and also portions of the capping layer is selectively etched with respect to the contact pad composing material at the end of the etching back process and thereby forming the contact pads to be electrically separated from each other. SAC is opened by etching insulating layer selectively to the capping layer using SAC gate mask. A conductive material as for SAC pad is deposited over the insulating layer to fill the SAC opening. Etching back process is carried out to form the SAC pad.
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