Semiconductor device reeventing light from entering its substrate transistor and the same for driving reflection type liquid crystal
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United States of America Patent
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Jul 24, 2001
Grant Date -
N/A
app pub date -
Jul 28, 1997
filing date -
Jul 30, 1996
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Abstract
An uppermost metal wiring layer is formed of titan Ti and titan nitride TiN formed thereon, on which tungsten W for filling a via hole can be deposited. The via hole is filled with W. The surface of a metal wiring layer below the uppermost metal wiring layer is covered with a low reflectivity film made of titan nitride. Thus, light incident on the surface of the semiconductor chip is prevented from reaching a substrate transistor within a semiconductor device and malfunctioning of the semiconductor device is prevented.
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