Deep trench cell capacitor with inverting counter electrode
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United States of America Patent
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-
Jul 24, 2001
Grant Date -
N/A
app pub date -
May 14, 1998
filing date -
Jul 30, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The preferred embodiment provides an integrated circuit capacitor that achieves a high capacitance by using an inversion layer in the substrate as the plate counter electrode for the capacitor. The inversion layer is created by forming a trench capacitor in a lightly doped substrate. With a sufficient workfunction difference between the storage node material and the isolation band the surface of the lightly doped substrate inverts, with the inversion charge being supplied by the isolation band. This inversion layer serves as the plate counter electrode for the capacitor.
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