Method for making a bipolar transistor for the protection of an integrated circuit against electrostatic discharges
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United States of America Patent
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Jul 24, 2001
Grant Date -
N/A
app pub date -
Dec 24, 1998
filing date -
Jan 28, 1994
priority date (Note) -
Expired
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Abstract
In a method for the making of a lateral bipolar transistor, the formation of a field oxide layer on the surface of the substrate, between the collector and the emitter of the protection transistor, is avoided. The lateral bipolar transistors made by the disclosed method are advantageously used to protect MOS type integrated circuits against electrical discharges.
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