Method for the manufacture of a light emitting diode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 24, 2001
Grant Date -
N/A
app pub date -
Jul 18, 1996
filing date -
Oct 9, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for manufacturing a light emitting diode with the following process steps. Preparation of a substrate; production on the substrate of a series of layers which include the pn junction, that generates the radiation; production of contact layers on the surface of the layers including the pn junction and generating the radiation, and on the rear side of the substrate; and tempering of the contact layers. The method is characterized by the surface of the layers including the pn junction and generating the radiation being frosted or roughened before the contact layers are deposited. Through frosting the front side, it is possible to increase the luminous efficiency of the diodes by about 25%. Since the frost-etching process is performed before the contact layers are produced, this method can be used when aluminum is to be used as the contact material. Since the frosting is restricted to the front side of the diodes and the electrically active pn junction emerges to the surface at the lateral areas, the life of the diodes is not adversely affected by the method.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully