Electrode structure for transistors, non-volatile memories and the like
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United States of America Patent
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Jul 17, 2001
Grant Date -
N/A
app pub date -
Mar 13, 1997
filing date -
Mar 13, 1997
priority date (Note) -
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Abstract
An electrode structure for semiconductor devices includes first electrode material positioned in overlying relationship to the surface of a substrate so as to define a first side wall perpendicular thereto. A nonconductive side wall spacer is formed on the first side wall and defines a second side wall parallel to and spaced from the first side wall. Second electrode material is formed in overlying relationship to the substrate and on the second side wall so as to define a third side wall parallel to and spaced from the second side wall. The first and second electrode materials are connected as first and second electrodes in a common semiconductor device. Additional electrodes can be formed by forming electrode material on additional side walls.
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