Epitaxial growth furnace
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United States of America Patent
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Jul 17, 2001
Grant Date -
N/A
app pub date -
Oct 16, 2000
filing date -
Nov 14, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An epitaxial growth furnace comprising first and second partition walls arranged within a reaction chamber, a first separate space surrounded by the partition walls and the inner wall surface of the reaction chamber, a second separate space partitioned by the partition walls so as to be isolated from the inner wall surface of the reaction chamber, a holding mechanism adapted to hold a pair of semiconductor wafers respectively on the first and second partition walls so that the principal surfaces of the pair of wafers face each other with spacing therebetween and are also exposed to the second separate space, and a pair of heaters for respectively irradiating radiant heat to the back surfaces of the two wafers.
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