Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices

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United States of America Patent

PATENT NO 6255035
SERIAL NO

09270535

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Abstract

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A process for forming T-shaped metal contacts on a dielectric substrate. The process includes deposition of first and second photoresist layers onto a substrate; individually overall electron beam exposure of both layers; with subsequent imagewise UV exposure and development of both layers to form hollow cavities in the layers. By concentrating the electron beam radiation on the mid-point in the thickness of each photoresist layer, the radiation is distributed throughout each layer, resulting in solubility properties which lead to the formation of hollow cavities of a certain desired shape. In one embodiment of the invention, three-dimensional structures are formed in the photoresist layers by filling the hollow cavities with metal. Subsequent removal of unwanted portions of the photoresist layers produces a dielectric substrate having T-shaped metal contacts on its surface.

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Patent Owner(s)

Patent OwnerAddress
ELECTRON VISION CORPORATION10317 LEAFWOOD PLACE SAN DIEGO CA 92131

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, John R Plano, TX 19 1278
Minter, Jason P San Diego, CA 3 55

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