Importance

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Abstract

A sputtering apparatus has a permanent, magnet for forming, in front of a target, a magnetic field for magnetron discharging. The permanent magnet is disposed behind the target and an RF induction discharge coil is disposed in front of the target. The permanent magnet is contained inside an evacuated cathode case which is in the form of a container and which is provided therein with a circulation passage for cooling water. The cathode case and the RF induction discharge coil are enclosed therearound by a metallic cover which has an aperture for emitting sputtered particles. To make an element for a magnetoresistance head, a substrate is transferred from a load lock chamber to a pre-treatment chamber to clean it therein by an etching apparatus. The substrate is then transferred to an ultrahigh vacuum film deposition chamber which is provided therein with a plurality of inductively coupled RF plasma-assisted magnetron sputtering apparatuses which are evacuated to an ultrahigh vacuum. Extremely thin multiple layers of flat non-magnetic layers and magnetic layers are alternately deposited therein on the substrate. The deposition is controlled by opening and closing a shutter which is disposed in a position to prevent splashing of the sputtered particles to the substrate. The substrate is moved to a position of respective sputtering apparatuses inside the film deposition chamber to deposit different kinds of films.

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First Claim