Semiconductor wafer etching method
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United States of America Patent
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Jun 26, 2001
Issued Date -
N/A
app pub date -
Nov 10, 1998
filing date -
Nov 4, 1993
priority date (Note) -
Expired
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Abstract
A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
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