Method for manufacturing semiconductor wafers
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United States of America Patent
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Jun 12, 2001
Grant Date -
N/A
app pub date -
Jan 7, 1999
filing date -
Jan 9, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A Bernoulli type chucking device 2 supports the rear surface 12 of a semiconductor wafer 1. The etchant 30 turns around and reaches the portion beneath the beveled portion 13 of the semiconductor wafers 1. However, the etchant is restrained on the beveled portion by a gas flow coming from the openings 22A of the gas-expelling passages 22 in the centrifugal direction. The gas belows off the etchant, which has turned around and is going to reach the rear surface. Thus, the beveled portion 13 is mirror-finished when etching of the semiconductor wafer front surface 11 is carried out, and mirror-finishing of part of the rear surface 12 can be avoided. Furthermore, mirror-finishing can be performed without being influenced by the shape of the beveled portions of semiconductor wafers. Compared with conventional method, this invention can perform mirror-finishing more efficiently.
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