Silicon single crystal wafer and manufacturing method for it
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United States of America Patent
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Jun 12, 2001
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N/A
app pub date -
Sep 3, 1999
filing date -
Dec 12, 1997
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Abstract
A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (.degree. C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.
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