Method and apparatus for producing epitaxial wafer
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United States of America Patent
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Jun 12, 2001
Grant Date -
N/A
app pub date -
Jun 30, 1997
filing date -
Jul 5, 1996
priority date (Note) -
Expired
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Abstract
A method and apparatus for forming an epitaxial layer on a semiconductor wafer supported on a suscepter in an epitaxial growth furnace. Ther wafer to be processed is placed on the suscepter outside the furnace. The suscepter carrying the wafer is transferred into the furnace from the outside thereof and mounted in a loading position within the furnace. An epitaxial growth process is then performed on the wafer on the suscepter mounted in the loading position. After the completion of the growth process, the suscepter carrying the wafer thereon is removed from the furnace loading position and transferred to the outside of the furnace.
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