Methods and apparatus for treating a semiconductor substrate
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United States of America Patent
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Jun 5, 2001
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app pub date -
Feb 17, 1999
filing date -
Aug 24, 1996
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Abstract
A liquid short-chain polymer of the general formula R.sub.a Si(OH).sub.b or (R).sub.a SiH.sub.b (OH).sub.c is deposited on a substrate, where a+b=4 or a+b+c=4, respectively, a, b and c are integers, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis. The short-chain polymer is then subjected to further polymerization to form an amorphous structure of the general formula (R.sub.x SiO.sub.y).sub.n, where x and y are integers, x+y=4, x.noteq.0, n equals 1 to .infin., R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis.
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