Method for crystallizing amorphous layer
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United States of America Patent
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Jun 5, 2001
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N/A
app pub date -
May 22, 1998
filing date -
May 24, 1997
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Abstract
A method for crystallizing an amorphous layer into a polycrystalline layer. The method uses a substrate under the amorphous layer and a nickel film on the amorphous layer, which are subjected to a heat treatment. The nickel film is formed by a coating step that uses a nickel-containing solution. Alternatively, a nickel and gold, or a nickel and palladium, solution can be used. The method eliminates contamination with metal in the polycrystalline silicon layer and reduces its growth temperature.
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