Importance

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Abstract

In accordance with one specific embodiment of the present invention, the ion assisted deposition source for thin films comprises an axially symmetric discharge region into which an ionizable gas is introduced, a sputter target at one end of that region, an axially symmetric magnetic field within and extending out the opposite and open end of that region, an anode around the circumference of that region, and an electron emitting cathode located near the open end of that region. Particles are sputtered from the sputter target, pass through the discharge region, and are deposited on a deposition substrate located exterior of both the discharge region and the deposition source. A beam of energetic ions from the discharge region bombards the film being deposited to improve the adhesion, density, and other properties of that film. The density of the plasma can be controlled with the emission from the cathode, the emission of sputtered particles from the sputter target can be controlled with the negative potential of that target, while the energy of the ions used to assist in the deposition can be controlled with the positive potential of the anode. The deposition source thus simultaneously generates a flux of sputtered material with which to deposit a film on a substrate and a beam of energetic ions to assist in that deposition, and does so with a simple and economical apparatus.

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First Claim