Electrophotographic selenium photoconductor
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United States of America Patent
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May 8, 2001
Grant Date -
N/A
app pub date -
Jun 3, 1999
filing date -
Jun 11, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A selenium photoconductor has a charge transport layer and a charge generation layer formed on a conductive substrate. Both the charge generation layer and the charge transport layer are made from a selenium-arsenic alloy, with the charge generation layer having a concentration of arsenic greater than the concentration of arsenic in the charge transport layer. This concentration distribution results in a photoconductor having excellent charge-generation efficiency and mobility. In an alternate embodiment, a halogen is doped into the charge generation layer and charge transport layer. The resulting photoconductor is useful in large-scale, high speed printing operations.
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