GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
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United States of America Patent
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May 1, 2001
Grant Date -
N/A
app pub date -
Mar 24, 1998
filing date -
Mar 25, 1997
priority date (Note) -
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Abstract
A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.
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