Method of cleaving a semiconductor wafer including implanting and annealing resulting in exfoliation
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United States of America Patent
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May 1, 2001
Grant Date -
N/A
app pub date -
Aug 19, 1999
filing date -
Aug 28, 1998
priority date (Note) -
Expired
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Abstract
A method of cleaving a semiconductor wafer comprising a deep ion implantation induced selective area of exfoliation. The method includes steps of selectively masking the material with a mask having edges parallel to natural cleavage planes of the semiconductor material, implanting unmasked regions of the material with light ions of hydrogen or helium, and annealing to cause exfoliation of the material from the implanted regions. As a result of exfoliation, the patterned structure remaining on the wafer and pieces of the exfoliated material have high quality sidewall-facets which provides cleaved facets along the cleavage planes of the material. A method of manufacturing optoelectronic devices and semiconductor laser devices is provided.
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