Thin film diode including carbon nitride alloy semi-insulator and method of making same
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United States of America Patent
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Apr 24, 2001
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N/A
app pub date -
Mar 6, 1998
filing date -
Mar 6, 1998
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Abstract
A system and method for driving a thin film diode (TFD) inclusive AMLCD or imaging device includes providing each pixel with a pair of select lines and a single data line. In certain embodiments, the insulator or semi-insulator layer between electrodes of the diode includes, or is of, amorphous carbon nitride alloy. In other embodiments, the semi-insulating layer includes polycrystalline carbon or nanocrystalline carbon.
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