Method and apparatus for processing refractory metals on semiconductor substrates
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United States of America Patent
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Apr 24, 2001
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N/A
app pub date -
Feb 16, 1999
filing date -
Jan 24, 1997
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Expired
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Abstract
The method and apparatus for heat treating and etching refractory metal and silicides of the refractory metal include integrated multi-chamber, multi-processing of substrates to react refractory metal and exposed silicon in self-aligned silicidation operations. Unreacted refractory metal on silicon oxide regions is selectively etched away distinctively from reacted silicide to yield highly precise self-aligned regions of silicide. Subsequent heat treatment at elevated temperatures reduces the sheet resistance of the silicide to yield highly conductive regions that are conducive to formation of conductor lines less than 0.25 .mu.m wide.
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