Extended range and ultra precision non contact dimensional gauge for ultra thin wafers and work pieces
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United States of America Patent
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Apr 24, 2001
Grant Date -
N/A
app pub date -
May 12, 2000
filing date -
May 12, 2000
priority date (Note) -
Expired
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Abstract
A method and a system for measurement the geometrical parameters of ultra thin wafers with the thickness less than 200 microns. The measurement system comprises two measurement channels and a computer. Each measurement channel comprises a motor-positionable probe further comprising a back pressure probe and a capacitive probe. The capacitive probe is substantially cocentric with the back pressure probe. The air back pressure sensor is used to calibrate the capacitive sensor for a given dielectric permittivity of the conductive target, and the capacitive sensor is used to measure thickness, flatness, bow, and warpage of the ultra-thin electrically conductive target.
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