Wafer drying device and method
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United States of America Patent
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Apr 24, 2001
Grant Date -
N/A
app pub date -
Nov 23, 1999
filing date -
Nov 24, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Nitrogen gas is jetted into a space on the liquid level of pure water in a drying chamber in which wafers are immersed. Simultaneously therewith, liquid-phase isopropyl alcohol is jetted at a temperature higher than the temperature of the wafers and in the vicinity of jetting openings for the nitrogen gas. When the wafers are exposed above the liquid level in the drying chamber, the pure water held on both front and rear surfaces of the wafers is replaced by the isopropyl alcohol of mist-form. The isopropyl alcohol is then evaporated, whereby the wafers are dried.
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