Remanent memory device
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United States of America Patent
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Apr 17, 2001
Grant Date -
N/A
app pub date -
Oct 28, 1998
filing date -
Oct 29, 1997
priority date (Note) -
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Abstract
A remanent, electrically programmable and erasable, memory device comprises of a MOS type transistor whose gate insulator contains charged mobile species is disclosed. The gate insulator is comprised transversely of a sandwich comprising at least five areas. Two intermediate areas have first band-gap values, and two endmost and a central areas have band gap values greater than the first values.
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