Epitaxial-wafer fabricating process
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United States of America Patent
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Apr 17, 2001
Grant Date -
N/A
app pub date -
Jun 15, 1999
filing date -
Jun 16, 1998
priority date (Note) -
Expired
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Abstract
In an epitaxial-wafer fabricating process for epitaxially growing a silicon layer on the surface of a silicon wafer having the crystal orientation <100> or <111> and an inclination angle of 0.degree..+-.1.degree. in a reactive gas at a atmosphereicpressure, a growth temperature T is lower than a normal growth temperature by 50.degree. C. to 100.degree. C. during the process of epitaxial growth.
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