Controlled amine poisoning for reduced shrinkage of features formed in photoresist
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United States of America Patent
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Apr 10, 2001
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N/A
app pub date -
May 12, 1999
filing date -
Oct 3, 1997
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Expired
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Abstract
A semiconductor device preparing according to a process comprising the step of photolithographic features formed in a photoresist including exposing the photoresist to at least one material selected from the group consisting of at least one amine, at least one amide, at least one aldehyde, and nitrogen.
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