Semi-insulated indium phosphide based compositions
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United States of America Patent
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Apr 3, 2001
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app pub date -
Feb 22, 1994
filing date -
Oct 21, 1983
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Abstract
It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
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