Manufacturing a capacitor electrode in a semiconductor device
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United States of America Patent
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Apr 3, 2001
Grant Date -
N/A
app pub date -
Sep 16, 1999
filing date -
Sep 16, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for use in forming a capacitor having a hollow-cylinder electrode structure in a semiconductor device via controlled reactive etching of substantially only one semiconducting layer of a semiconductor device. In one embodiment, the device is a dynamic random access memory (DRAM) structure. In another embodiment, the device is a microprocessor.
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