Method of processing films prior to chemical vapor deposition using electron beam processing
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United States of America Patent
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Mar 20, 2001
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N/A
app pub date -
Jun 11, 1999
filing date -
Jun 11, 1999
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Abstract
A process for the treatment of the surface of dielectric films to remove moisture and other contaminants. Such treatment is done by electron beam exposure in order to prepare the surface for a subsequent chemical vapor deposition of oxide, nitride or oxynitride layers. The films are useful in the manufacture of integrated circuits.
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