Method and apparatus for producing a semiconductor device
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United States of America Patent
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Mar 20, 2001
Grant Date -
N/A
app pub date -
Jan 15, 1999
filing date -
Jan 16, 1998
priority date (Note) -
Expired
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Abstract
The film growth speed of a conventional vertical heating method, such as SiO.sub.2 film, polycrystalline Si film or the like of a semiconductor device, is enhanced by means of discharging and sucking the reaction gas onto and from the Si wafers placed horizontally in the vertical furnace. The wafers are rotated and the wafer-distance is set at 5 mm or more.
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