Method of manufacturing shallow trench isolation
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United States of America Patent
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Mar 20, 2001
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N/A
app pub date -
Mar 16, 1999
filing date -
Mar 16, 1999
priority date (Note) -
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Abstract
A method for manufacturing a shallow trench isolation. A substrate is provided, wherein the substrate has a pad oxide on the substrate and a silicon nitride layer on the pad oxide layer, and a trench penetrates through the silicon oxide layer and the pad oxide layer and into the substrate. A first oxide layer is conformally formed on the silicon nitride layer and in the trench. A rapid thermal process is performed. A second oxide layer is formed on the oxide layer to fill the trench. Portions of the first and the second oxide layers are removed to expose the silicon nitride layer.
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