Melt depth control for semiconductor materials grown from a melt
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 13, 2001
Grant Date -
N/A
app pub date -
May 3, 1999
filing date -
May 3, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention features a method of controlling the depth of a melt for or crystal growth. According to the method, an input signal is applied through a crucible and a material disposed within the crucible. An output signal generated in response to the input signal is measured. The output signal relates to the depth of the melt. An amount of the source material introduced into the melt is adjusted to maintain the depth of the melt at a substantially constant level using the output signal.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully