Method for determining the temperature in a thermal processing chamber
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United States of America Patent
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Mar 13, 2001
Grant Date -
N/A
app pub date -
Mar 15, 1999
filing date -
Mar 15, 1999
priority date (Note) -
Expired
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Abstract
A system and method for determining the temperature of substrates in a thermal processing chamber in the presence of either an oxidizing atmosphere or a reducing atmosphere is disclosed. Specifically, temperature determinations made in accordance with the present invention are generally for calibrating other temperature sensing devices that may be used in conjunction with the thermal processing chamber. The method of the present invention is generally directed to heating a substrate containing a reactive coating within a thermal processing chamber in an oxidizing atmosphere or reducing atmosphere. As the wafer is heated, the reactive coating reacts with gases contained within the chamber based upon the temperature to which the substrate is exposed. After heated, the thickness of any coating that is formed on the substrate is then measured for determining the temperature to which the substrate was heated. This information can then be used to calibrate other temperature sensing devices, such as thermocouples and pyrometers.
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