Sense amplifier for low voltage memory arrays
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United States of America Patent
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Mar 6, 2001
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N/A
app pub date -
Feb 28, 2000
filing date -
Feb 28, 2000
priority date (Note) -
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Abstract
A sense amplifier is coupled to a memory array comprising a first plurality of cells coupled to a first bit line and a dummy cell coupled to a second bit line. The sense amplifier includes a first source follower comprising a first current sink and a first source follower transistor having a gate coupled to the first bit line and a second source follower comprising a second current sink and a second source follower transistor having a gate coupled to the second bit line. The sense amplifier also includes a first n-channel transistor having a gate coupled to the first bit line and a first p-channel transistor having a gate coupled to the first bit line through the first source follower. The sense amplifier also includes a second n-channel transistor having a gate coupled to the second bit line and a second p-channel transistor having a gate coupled to the second bit line through the second source follower.
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