Dielectric device, dielectric memory and method of fabricating the same
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United States of America Patent
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-
Feb 27, 2001
Grant Date -
N/A
app pub date -
Jun 15, 1998
filing date -
Jun 16, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A gate insulating layer and a first lower electrode are formed on a channel region of a silicon substrate, and an interlayer insulating film is formed on the silicon substrate so as to cover the first lower electrode and the gate insulating film. A buffer layer is formed on the interlayer insulating film, and a contact hole is formed in the interlayer insulating film and the buffer layer on the first lower electrode. A connecting layer and a second lower electrode are formed in the contact hole. A ferroelectric thin film and an upper electrode are formed in this order on the buffer layer so as to be brought into contact with the upper surface of the second lower electrode.
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