Thin film transistor and method of producing the same
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United States of America Patent
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Feb 6, 2001
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N/A
app pub date -
Dec 3, 1998
filing date -
Dec 4, 1997
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Abstract
On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and the region 5 has a high impurity concentration. The length of the low concentration region 4 measured from the edge of gate insulating film 9 is not smaller than the average grain size of the polycrystal semiconductor film 3. The LCD device employing the TFT thus constructed is free from white spots (micro brighter spots) in a high temperature atmosphere.
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