Copper metallization of USLI by electroless process
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United States of America Patent
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Jan 30, 2001
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N/A
app pub date -
Oct 13, 1998
filing date -
Oct 13, 1998
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Abstract
The invention provides three embodiments for forming Cu/Au contacts and interconnects using electroless deposition. The three embodiments have different adhesion and barrier layers for the electroless Cu or Au plugs. The invention discloses a technique of utilizing electroless deposition in USLI circuits. This metalization process is an additive and selective to provide conducting layers as well as an interconnection between layers of a multilevel conductive metal semiconductor device. The first embodiment uses adhesion layers formed of Ni, Al, polysilicon or PdSi.sub.x ; and a barrier layer composed of Ni--B, Ni, Pd, or Co and has first and second metal plugs formed by selective Cu or Au electroless processes. The second embodiment forms adhesion layers of PdSi.sub.x. The third embodiment forms adhesion layers of activated Ti or Al. Cu or Au plugs are selectively electroless deposited to form interconnects.
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