Process for determining the crystal orientation in a wafer

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United States of America Patent

PATENT NO 6177285
SERIAL NO

09142124

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Abstract

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A method for determining the crystal orientation of a wafer using anisotropic etching in which an etching mask having mask openings such as circle scale marks arranged one beside the other is applied in relation to a preexisting marking of the wafer. Mask openings are configured in a double-T shape and are arranged one beside the other so that their first, transversely extending segments and the second transversely extending segments are situated at a predetermined distance apart and the areas connecting the segments are situated equidistant. The crystal orientation is determined with the distance of the two particular adjacent mask openings, the intervening space of which is least undercut, from the preexisting marking.

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Patent Owner(s)

Patent OwnerAddress
HANGER SOLUTIONS LLC44 MILTON AVENUE SUITE 254 ALPHARETTA GA 30009

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jantke, Gabriele Berlin, DE 1 6
Steckenborn, Arno Berlin, DE 25 166
Winkler, Thoralf Gauernitz, DE 2 46

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