Semiconductor laser device

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United States of America Patent

PATENT NO 6175582
SERIAL NO

09199435

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Abstract

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Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

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Patent Owner(s)

Patent OwnerAddress
MITSUI CHEMICALS INCTOKYO JAPAN TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujimoto, Tsuyoshi Sodegaura, JP 40 445
Naito, Yumi Sodegaura, JP 6 159
Oeda, Yasuo Sodegaura, JP 12 168

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  • 118 Citation Count
  • H01S Class
  • 99.77 % this patent is cited more than
  • 24 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges112609637167742101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7081 - 9091 - 100020406080100120140160180200220240260280

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