Method of producing optical waveguides
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United States of America Patent
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Jan 16, 2001
Grant Date -
N/A
app pub date -
Dec 11, 1998
filing date -
Dec 12, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of producing an optical waveguide, in which a substrate of silicon is etched porously to a defined depth by anodic oxidation in an electrolyte containing hydrofluoric acid. The etched substrate is doped in a suitable dopant liquid containing cations. The doped layer of porous silicon is stabilized at an elevated temperature, and the stabilized layer is oxidized with a further increase in temperature. The oxidized porous layer is made to collapse at a temperature sufficient for partial melting. The surface of the collapsed silicon dioxide layer is covered in a pattern by a lithographic technique, and the cations are replaced by silver ions in the uncovered areas of the surface by bringing the surface in contact with a solution containing silver ions or silver complex ions.
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