Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 16, 2001
Grant Date -
N/A
app pub date -
Apr 16, 1997
filing date -
Apr 16, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A plasma processing system includes a plasma reactor, a first power circuit, a second power circuit and a feedback circuit. The first power circuit supplies a first radio frequency (rf) energy to the plasma reactor that is suitable for creating a direct current bias on a workpiece positioned within a plasma chamber. The second power circuit supplies a second rf energy to the plasma reactor that is suitable for striking a plasma within the plasma chamber. The feedback circuit is coupled to control the first power circuit by detecting at least one parameter associated with the first rf energy and providing a feedback control signal to the first power circuit. The first power circuit adjusts the first rf energy so that a level of energy of the ionized particles within the plasma chamber is substantially controlled via the direct current bias created by the first rf energy. A second feedback circuit can also be provided to control the second power circuit so that a level of plasma density within the plasma chamber is substantially controlled.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully