Controlled hot-electron writing method for non-volatile memory cells
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United States of America Patent
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Jan 9, 2001
Grant Date -
N/A
app pub date -
Oct 8, 1998
filing date -
Oct 9, 1997
priority date (Note) -
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Abstract
In order to optimize writing of the cell, the latter is written in a condition of equilibrium between an injection current I.sub.g and the displacement current C.sub.pp V.sub.sl. In this way, during writing, the voltage of the floating gate region V.sub.fl remains constant, as does the drain current and the rise in the threshold voltage. In particular, both for programming and for soft-writing after erasure, the substrate of the cell is biased at a negative voltage V.sub.sb with respect to the source region, and the control gate region of the cell receives a ramp voltage V.sub.cg with a selected predetermined inclination V.sub.sl satisfying an equilibrium condition V.sub.sl
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