Nitride semiconductor light-emitting and light-receiving devices
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United States of America Patent
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Jan 9, 2001
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N/A
app pub date -
Jan 9, 1998
filing date -
Jan 9, 1997
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Abstract
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
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