Thermoelectric semiconductor having a sintered semiconductor layer and fabrication process thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 9, 2001
Grant Date -
N/A
app pub date -
Apr 12, 1999
filing date -
Jul 26, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thermoelectric semiconductor is formed of a sintered semiconductor layer and metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and solder layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully